Assignment 1 (Numerical)

Q1

In an N-type semiconductor, the Fermi level is 0.3 eV below the conduction level at a room temperature of 300 K. If the temperature is increased to 360 K, determine the new position of the Fermi level.

Q2

In a P-type semiconductor, the Fermi level is 0.3 eV above the valance band at a room temperature of 300 K. Determine the new position of the Fermi level for temperatures of (a) 350 K and (b) 400 K.

Q3

In a P-type semiconductor, the Fermi level lies 0.4 eV above the valence band. Determine the new position of Fermi level if the concentration of acceptor atoms is multiplied by a factor of (a) 0.5 and (b) 4. Assume kT = 0.025 eV.

Q4

The electron and hole mobility of Silicon are 0.17 m²/Vs and 0.035 m²/Vs respectively at room temperature. If the current density is known to be 1.1x10¹⁶ per cubic meter, calculate the resistivity of silicon.